Preparation and ferroelectric domain structure of micro-scale piezoelectric array fabricated by Mn doped Pb(In_1/2Nb_1/2)O₃-Pb(Mg_1/3Nb_2/3)O₃-PbTiO₃single crystal

Micro-/macro-responses of a ferroelectric single crystal with domain pinning and depinning by dislocations

PREPARATION AND CRYSTAL STRUCTURE OF CaCl .[OC(NH ) ]

Calcium dichloride tetra urea was prepared by the reaction of calcium chloride with urea in aqueous solution. The crystals are monoclinic, a= 7.633, b= 12.45 1, c= 8.118 ?,? = 113.17, Z = 4, space group P 2,/a. The crystal structure was determined by single crystal X-ray methods and refined to R= 0.041. The calcium atoms are coordinated to four oxygen atoms of urea and to two chloride ions....

Micro Photo Detector Fabricated of Ferroelectric-Metal Heterostructure.

The anomalous photovoltaic effect (APE) in ferroelectric thin films has been utilized for the development of an optical micro-detector active in the visible range (from 350 to 800 nm). La-doped Pb(Zr,Ti)O(3) (PLZT) ferroelectric films epitaxially grown on Pt(001)/Mg(001) substrate were fabricated into micro-detector arrays and characterized as to their optical response. The Au/PLZT/Pt/MgO devic...

Ferroelectric Domain Structure and Local Piezoelectric Properties of Lead-Free (Ka0.5Na0.5)NbO3 and BiFeO3-Based Piezoelectric Ceramics

Recent advances in the development of novel methods for the local characterization of ferroelectric domains open up new opportunities not only to image, but also to control and to create desired domain configurations (domain engineering). The morphotropic and polymorphic phase boundaries that are frequently used to increase the electromechanical and dielectric performance of ferroelectric ceram...

Fatigue mechanism of yttrium-doped hafnium oxide ferroelectric thin films fabricated by pulsed laser deposition.

Owing to their prominent stability and CMOS compatibility, HfO2-based ferroelectric films have attracted great attention as promising candidates for ferroelectric random-access memory applications. A major reliability issue for HfO2 based ferroelectric devices is fatigue. So far, there have been a few studies on the fatigue mechanism of this material. Here, we report a systematic study of the f...